Course Description

Duration 5 day(s)

Language ENGLISH    Venue STUniversity Fuveau France

Country 

Course fee 305,00    Currency EURO    Discount None

Description
The Masters in Microelectronics Technology and Manufacturing Management proposed by ST University, the corporate university of STMicroelectronics, in collaboration ESIM (Ecole Sup?eure des Ing?eurs de Marseille) and ENSPM (Ecole Nationale Sup?eure de Physique de Marseille).

Diploma: Recognized Masters Degree by the French "Conference des Grandes Ecoles".
Purpose : to provide engineers with broad range of technical and managerial knowledge used in the microelectronics industry.
Curriculum (540hours): two possibilities - nine months, every other week, followed by, or in parallel with, a 6 months thesis work preparation in a company or one week per month over 18 months, including, or followed by the 6 months thesis preparation period. Course modules can be also followed independently for continuous education purpose.

Teachers : teaching is delivered in English, by a board of experts from many ST sites, or professors from universities and engineering schools from european locations. -Location : STUniversiy campus, close to Rousset plant. Marseilles France.
- BASICS OF DESIGN module is part of the STUniversity Masters in Microelectronics Technology and Manufacturing Management. As well as being a key component part of the total Masters program, this module is also open to applicants who wish to attend one or more days of the courses identified in the program outline below. In this module, design techniques for both analog and digital circuits are presented. Methods used in the process of designing integrated circuits, from functional description to device layout, are described. It consists of the following courses:
- Design of analog circuits
- Design of digital circuits
- Electro-magnetic compatibility
- Link between design rules and technology

Tuition fees for full Master: - Students or unemployed persons : 5335 EURO Taxes included - Employees : 11435 EURO Before taxes - Separate modules, per day : 305 EURO Before taxes.

Course Contents and Time Table
DAY 1 & 2: DESIGN OF ANALOG CIRCUITS PART II
Program Focus : MOS and Bipolar analog integrated architectures understanding & designing of high quality analog integrated circuits taking into account phenomena like power, distortion, stability, sensitivity and temperature effects. Low power and high speed analog integrated circuits will be presented and discussed.
Benefits: At the end of this course you will be more effective in designing analog integrated circuit. You will learn how to apply your knowledge for different analog applications.
Prerequisite: Laplace transforms and frequency-domain circuit analysis & principles of transistor operation & functionning of sample analog circuits

Program Outline:
1 Differential input pairs
2. Current conveyors
-First generation current conveyor
- Second generation current conveyor 3 Differential amplifiers (part II)
- Operational transconductance amplifier
- Voltage feedback amplifier
- Current feedback amplifier
4. Example of applications - GM-C type filters & oscillators
- Voltage comparators
- Linear DC-DC voltage down converter
- Switched capacitor filter (basic)

DAY 3 & 4: LINK BETWEEN DESIGN RULES AND TECHNOLOGYProgram Focus: Illustration of the evolution of hcmosx family in terms of technology, design rules and performances. Illustration of basic design rules, technology-oriented specific rules, electrical design rules.

Benefits: - Understand design rule manuals for hcmso6 and hcmos7 -Understand the technological origin of major design constraints - Illustrate design concepts on a user-friendly PC tool
Prerequisite: - MOS devices - CMOS process - Basics of design

Program Outline:
Day one: 1/2 day (slides):
- Evolution of hcmosx family
- MOS model evolution
-Interconnect model evolution
- Package model evolution 1/2 day (training using the PC room)
- Introducing MICROWIND2, hcmos6 rules
- Design of a ring oscillator applying basic design rules
- Fit Model 3, model 9 with measurements
- Simulation with hcmos6, hcmos7, hcmos8
Day two: ½ day (slides):
- Link between design and performances
- Impact on basic cell design
- Impact on routing
- Plasma rules
- Dummy rules
- Signal integrity rules ½ day (training using the PC room)
- OpAmp design
- RC effect
- Crosstalk effect
DAY 5:ELECTROMAGNETIC COMPATIBILITY:
Program Focus: This course aims at presenting the challenges for electromagnetic compatibility of integrated circuits. The main focus concerns parasitic emission, how to design low emission circuits, how to modelize and measure the IC emission. A second topic concerns susceptibility, with focus on measurement methods and hardware/software techniques to improve susceptibility. Finally, signal integrity is illustrated and specific design rules are presented.
Benefits: Understand the mechanisms of parasitic emission. Take part to a global emission reduction strategy. Handle standard measurements of emission and susceptibility. Design circuits with reduced signal integrity problems.
Prerequisite: IC design Principles. English.

Program Outline:
Introduction to EMC for ICs.
Strategical impact of low emission.
Measuring emission (Microcontrolers).
Modelling emission.
Emission reduction techniques.
Measurement methods for susceptibility.
Signal integrity design rules.

Audience
Young engineers willing to acquire a specialization in microelectronics technologies and manufacturing management
- people with a recognized technical professional experience, willing to upgrade their knowledge with this officially accredited degree
- companies wishing to train their newly hired engineers, or to prepare students to be hired by them.

Lecturers
DAY 1& 2:Hervé Barthélemy (IEEE member since 1996) the M.Sc. and Ph.D. degrees from the Institut d`Electronique Fondamentale, University of Paris XI, Orsay, France, in 1992 and 1996 respectively, all in electrical engineering. He his currently andassociate professor in Electronics and CommunicationsEngineering at the University of Aix-Marseille-I.
DAY 3,4 & 5:Etienne SICARD was born in Paris, June 1961. He received the B.S degree in 1984 and the PhD in Electrical Engineering from the University of Toulouse, in 1987, in the laboratory LAAS of Toulouse. He is currently a senior lecturer in the INSA of Toulouse, Department of Electrical and Computer Engineering. His research interest include several aspects of CAD Tools for the design of integrated circuits, including signal integrity in deep sub-micron CMOS ICs, DSP, and electromagnetic compatibility.

Further information
Fabrizio Battaglia ST University Program Manager STMicroelectronics Ph: +33 (0)4 42 53 54 59 Fax: +33 (0)4 42 53 54 72 fabrizio.battaglia@st.com