Course Description

Duration 1 day(s)

Language English    Venue STUniversity Fuveau, France

Country 

Course fee 305,00    Currency EURO    

Description
This six-hour course covers integrated circuit PN junctions and bipolar transistors. It first looks at the properties of PN junctions, followed by bipolar transistor structure and properties and a derivation of large-signal and small-signal models.

Course Contents and Time Table
Chapter 1: PN junctions
*Semiconductors and PN junctions
*Electrical resistivity of semiconductors
*Depletion region of PN junctions

Chapter 2: Bipolar transistors
*Forward active mode
*Effects of collector voltage
*Saturation and inverse mode
*Transistor breakdown voltages
*Current gain in different operating conditions

Chapter 3: Small signal behavior of bipolar transistors
*Input capacitance
*Input resistance
*Output resistance
*Collector base resistance
*Parasitic elements
*Transistor frequency response

Audience
- Young engineers willing to acquire a specialization in microelectronics technologies and manufacturing management
- People with a recognized technical professional experience, willing to upgrade their knowledge.

Lecturers
Professor Didier GOGUENHEIM received the Engineer degree in Electronics (1987) from ISEN High School (Institut Supérieur d`Electronique du Nord - Lille), and the Ph.D. degree in Materials Science (1992). His research activities include the study of defects in semiconductors, the reliability of MOS structures and the electrical characterization and modeling of devices.

Further information
Fabrizio Battaglia ST University Program Manager STMicroelectronics Ph: +33 (0)4 42 53 54 59 Fax: +33 (0)4 42 53 54 72 fabrizio.battaglia@st.com